Electronic Component
SI9945BDY-T1-GE3
TrenchFET® FETs - Arrays 3V @ 250µA, 60VAvailability
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BASE PART NUMBER: SI9945
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 5.3A
DETAILED DESCRIPTION: MOSFET ARRAY 2 N-CHANNEL (DUAL) 60V 5.3A 3.1W SURFACE MOUNT 8-SO
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
FET FEATURE: LOGIC LEVEL GATE
FET TYPE: 2 N-CHANNEL (DUAL)
GATE CHARGE (QG) (MAX) @ VGS: 20NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 665PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI9945BDY-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 22 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER - MAX: 3.1W
RDS ON (MAX) @ ID, VGS: 58 MOHM @ 4.3A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
VGS(TH) (MAX) @ ID: 3V @ 250ΜA


