CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  60A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 40V 60A (TC) 5.2W (TA), 125W (TC) SURFACE MOUNT 10-POLARPAK® (L)

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  145NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  6100PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIE868DF-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  27 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  10-POLARPAK® (L)

PACKAGING:  REEL

POWER DISSIPATION (MAX):  5.2W (TA), 125W (TC)

RDS ON (MAX) @ ID, VGS:  2.3 MOHM @ 20A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  10-POLARPAK® (L)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.2V @ 250ΜA