CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  12A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  70NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  1224PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIHB12N65E-GE3

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER - MAX:  156W

RDS ON (MAX) @ ID, VGS:  380 MOHM @ 6A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  D²PAK (TO-263)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA