CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  33A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 600V 33A (TC) 278W (TC) SURFACE MOUNT D²PAK (TO-263)

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  155NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3454PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIHB33N60EF-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  278W (TC)

RDS ON (MAX) @ ID, VGS:  98 MOHM @ 16.5A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  D²PAK (TO-263)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA