CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 620V 6A (TC) 78W (TC) SURFACE MOUNT TO-252AA

DRAIN TO SOURCE VOLTAGE (VDSS):  620V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  34NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  578PF @ 100V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIHD6N62ET1-GE3

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  78W (TC)

RDS ON (MAX) @ ID, VGS:  900 MOHM @ 3A, 10V

SERIES:  E

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  TO-252AA

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA