CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  62NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  1076PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIHH11N60E-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER - MAX:  114W

RDS ON (MAX) @ ID, VGS:  339 MOHM @ 5.5A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 8 X 8

VGS(TH) (MAX) @ ID:  4V @ 250ΜA