CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  25A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 600V 25A (TC) 202W (TC) SURFACE MOUNT POWERPAK® 8 X 8

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  116NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2815PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIHH26N60E-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  21 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  202W (TC)

RDS ON (MAX) @ ID, VGS:  135 MOHM @ 13A, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  POWERPAK® 8 X 8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA