ADDITIONAL FEATURE:  AVALANCHE RATED

AVALANCHE ENERGY RATING (EAS):  100 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  100 V

DRAIN CURRENT-MAX (ABS) (ID):  4.3 A

DRAIN CURRENT-MAX (ID):  4.3 A

DRAIN-SOURCE ON RESISTANCE-MAX:  540 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-251

JESD-30 CODE:  R-PSIP-T3

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIHLU110-GE3

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  IN-LINE, R-PSIP-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PART PACKAGE CODE:  TO-251

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  3

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  25 W

PULSED DRAIN CURRENT-MAX (IDM):  17 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FINISH:  MATTE TIN (SN)

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON