CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  33A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 30V 33A (TC) 3.3W (TA), 14.7W (TC) SURFACE MOUNT POWERPAK® SO-8

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  21.5NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1000PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIRA18DP-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® SO-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.3W (TA), 14.7W (TC)

RDS ON (MAX) @ ID, VGS:  7.5 MOHM @ 10A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® SO-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  +20V, -16V

VGS(TH) (MAX) @ ID:  2.4V @ 250ΜA