CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  28NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1100PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIS406DN-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® 1212-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.5W (TA)

RDS ON (MAX) @ ID, VGS:  11 MOHM @ 12A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±25V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA