AVALANCHE ENERGY RATING (EAS):  11.25 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  30 V

DRAIN CURRENT-MAX (ABS) (ID):  18 A

DRAIN CURRENT-MAX (ID):  18 A

DRAIN-SOURCE ON RESISTANCE-MAX:  13.5 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  S-XDSO-C5

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIS780DN-T1-GE3

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  5

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  SMALL OUTLINE, S-XDSO-C5

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  8

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  27.7 W

PULSED DRAIN CURRENT-MAX (IDM):  50 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  C BEND

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON