SISA72DN-T1-GE3

Factory Authorized Line

VISHAY

Electronic Component

SISA72DN-T1-GE3

N-CHANNEL 40V 60A (TC) 52W (TC) SURFACE MOUNT POWERPAK® 1212-8
Call for availability VISHAY
Mfr Part # SISA72DN-T1-GE3
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  POWERPAK® 1212-8PACKAGING:  REELSTANDARD PACKAGE:  3,000SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8
Contact Sales

Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  60A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 40V 60A (TC) 52W (TC) SURFACE MOUNT POWERPAK® 1212-8

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  30NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3240PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SISA72DN-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® 1212-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  52W (TC)

RDS ON (MAX) @ ID, VGS:  3.5 MOHM @ 10A, 10V

SERIES:  TRENCHFET® GEN IV

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  +20V, -16V

VGS(TH) (MAX) @ ID:  2.4V @ 250ΜA