CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  50A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 20V 50A (TC) 4.8W (TA), 57W (TC) SURFACE MOUNT POWERPAK® 1212-8S (3.3X3.3)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  300NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  8840PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SISS23DN-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -50°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  4.8W (TA), 57W (TC)

RDS ON (MAX) @ ID, VGS:  4.5 MOHM @ 20A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8S (3.3X3.3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  900MV @ 250ΜA