CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  16A, 28A

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (HALF BRIDGE) 30V 16A, 28A 29W, 100W SURFACE MOUNT 6-POWERPAIR?

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (HALF BRIDGE)

GATE CHARGE (QG) (MAX) @ VGS:  21NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  790PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIZ918DT-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-POWERPAIR?

PACKAGING:  REEL

POWER - MAX:  29W, 100W

RDS ON (MAX) @ ID, VGS:  12 MOHM @ 13.8A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  6-POWERPAIR?

VGS(TH) (MAX) @ ID:  2.2V @ 250ΜA