CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.6A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

EXPANDED DESCRIPTION:  P-CHANNEL 40V 4.6A (TC) 3W (TC) SURFACE MOUNT SOT-23-3 (TO-236)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  16NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  620PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SQ2319ES-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3W (TC)

RDS ON (MAX) @ ID, VGS:  75 MOHM @ 3A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA