CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.3A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 60V 4.3A (TC) 3W (TC) SURFACE MOUNT

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  12NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  550PF @ 30V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SQ2362ES-T1_GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3W (TC)

RDS ON (MAX) @ ID, VGS:  95 MOHM @ 4.5A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101, TRENCHFET®

STANDARD PACKAGE:  1

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA