CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ID):  3.9 A

DRAIN-SOURCE ON RESISTANCE-MAX:  145 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  57 PF

JEDEC-95 CODE:  MO-193AA

JESD-30 CODE:  R-PDSO-G6

MANUFACTURER:  VISHAY INTERTECHNOLOGIES

MANUFACTURER PART NUMBER:  SQ3985EV-T1_GE3

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  P-CHANNEL

REFERENCE STANDARD:  AEC-Q101

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR ELEMENT MATERIAL:  SILICON