Electronic Component
SQJ457EP-T1_GE3
P-CHANNEL 60V 36A (TC) 68W (TC) SURFACE MOUNT POWERPAK® SO-8Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 36A (TC)
DETAILED DESCRIPTION: P-CHANNEL 60V 36A (TC) 68W (TC) SURFACE MOUNT POWERPAK® SO-8
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 100NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3400PF @ 25V
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SQJ457EP-T1_GE3
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 68W (TC)
RDS ON (MAX) @ ID, VGS: 25 MOHM @ 10A, 10V
SERIES: AUTOMOTIVE, AEC-Q101, TRENCHFET®
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA





