CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  58A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  55NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  2450PF @ 20V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SQJ858AEP-T1_GE3

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  POWERPAK® SO-8

POWER - MAX:  48W

RDS ON (MAX) @ ID, VGS:  6.3 MOHM @ 14A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101, TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® SO-8

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA