CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  22.5A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 200V 22.5A (TC) 68W (TC) SURFACE MOUNT POWERPAK® SO-8

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  7.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  27NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1300PF @ 25V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SQJA20EP-T1_GE3

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  POWERPAK® SO-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  68W (TC)

RDS ON (MAX) @ ID, VGS:  50 MOHM @ 10A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101, TRENCHFET®

SUPPLIER DEVICE PACKAGE:  POWERPAK® SO-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.5V @ 250ΜA