CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  120A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  330NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  14700PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SQM120N06-3M5L_GE3

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER - MAX:  375W

RDS ON (MAX) @ ID, VGS:  3.5 MOHM @ 30A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  TO-263

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA