CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  19A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 200V 19A (TC) 3W (TA), 136W (TC) SURFACE MOUNT TO-252, (D-PAK)

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  51NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1800PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SUD19N20-90-E3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3W (TA), 136W (TC)

RDS ON (MAX) @ ID, VGS:  90 MOHM @ 5A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  TO-252, (D-PAK)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA