CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  21.4A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 60V 21.4A (TC) 5.7W (TA), 31.25W (TC) SURFACE MOUNT TO-252, (D-PAK)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  17NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  670PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SUD23N06-31-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  5.7W (TA), 31.25W (TC)

RDS ON (MAX) @ ID, VGS:  31 MOHM @ 15A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  TO-252, (D-PAK)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA