CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  37.1A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 100V 37.1A (TC) 8.3W (TA), 136W (TC) SURFACE MOUNT TO-252, (D-PAK)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  160NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4600PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SUD50P10-43L-E3

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  8.3W (TA), 136W (TC)

RDS ON (MAX) @ ID, VGS:  43 MOHM @ 9.2A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-252, (D-PAK)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA