CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  110A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  80V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  P-CHANNEL 80V 110A (TC) 13.6W (TA), 375W (TC) SURFACE MOUNT TO-263 (D2PAK)

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  270NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  10850PF @ 40V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SUM110P08-11L-E3

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  13.6W (TA), 375W (TC)

RDS ON (MAX) @ ID, VGS:  11.2 MOHM @ 20A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-263 (D2PAK)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA