CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  2NC @ 4.5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  TN0200K-T1-E3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  350MW (TA)

RDS ON (MAX) @ ID, VGS:  400 MOHM @ 600MA, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  1V @ 50ΜA