ADDITIONAL FEATURE:  LOW CAPACITANCE

BREAKDOWN VOLTAGE-MAX:  8 V

BREAKDOWN VOLTAGE-MIN:  6.3 V

BREAKDOWN VOLTAGE-NOM:  7.2 V

CASE CONNECTION:  CATHODE

CLAMPING VOLTAGE-MAX:  15 V

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  TRANS VOLTAGE SUPPRESSOR DIODE

JESD-30 CODE:  S-PDSO-N6

JESD-609 CODE:  E3

MANUFACTURER:  VISHAY SEMICONDUCTORS

MANUFACTURER PACKAGE CODE:  LLP75-6L

MANUFACTURER PART NUMBER:  VBUS054B-HSF-GS08

MOISTURE SENSITIVITY LEVEL:  1

NON-REP PEAK REV POWER DIS-MAX:  200 W

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  6

OPERATING TEMPERATURE-MAX:  125 °C

OPERATING TEMPERATURE-MIN:  -40 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  S-PDSO-N6

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  6

POLARITY:  UNIDIRECTIONAL

QUALIFICATION STATUS:  NOT QUALIFIED

REP PK REVERSE VOLTAGE-MAX:  5 V

SUBCATEGORY:  TRANSIENT SUPPRESSORS

SURFACE MOUNT:  YES

TECHNOLOGY:  AVALANCHE

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  NO LEAD

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40