CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  400MA

DRAIN TO SOURCE VOLTAGE (VDSS):  90V

EXPANDED DESCRIPTION:  MOSFET ARRAY 4 N-CHANNEL 90V 400MA 2W

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  4 N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  60PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  VQ1006P-2

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGING:  TUBE

POWER - MAX:  2W

RDS ON (MAX) @ ID, VGS:  4.5 OHM @ 1A, 10V

STANDARD PACKAGE:  25

VGS(TH) (MAX) @ ID:  2.5V @ 1MA