BASE PART NUMBER:  1N1200

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  12A

CURRENT - REVERSE LEAKAGE @ VR:  2.5MA @ 100V

DETAILED DESCRIPTION:  DIODE STANDARD 100V 12A CHASSIS, STUD MOUNT DO-203AA

DIODE TYPE:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  VS-1N1200RA

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS, STUD MOUNT

OPERATING TEMPERATURE - JUNCTION:  -65°C ~ 200°C

PACKAGE / CASE:  DO-203AA, DO-4, STUD

PACKAGING:  BULK PACK

SPEED:  STANDARD RECOVERY >500NS, > 200MA (IO)

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  DO-203AA

VOLTAGE - DC REVERSE (VR) (MAX):  100V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.35V @ 12A