CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  190A

DETAILED DESCRIPTION:  N-CHANNEL 100V 190A 568W (TC) CHASSIS MOUNT SOT-227

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  250NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  10700PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SEMICONDUCTOR DIODES DIVISION

MANUFACTURER PART NUMBER:  VS-FB190SA10

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-227-4, MINIBLOC

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  568W (TC)

RDS ON (MAX) @ ID, VGS:  6.5 MOHM @ 180A, 10V

STANDARD PACKAGE:  10

SUPPLIER DEVICE PACKAGE:  SOT-227

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4.35V @ 250ΜA