BASE PART NUMBER:  DDTC114

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  180 @ 50MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MHZ 250MW SURFACE MOUNT 3-DFN1006 (1.0X0.6)

FREQUENCY - TRANSITION:  250MHZ

MANUFACTURER:  DIODES INCORPORATED

MANUFACTURER PART NUMBER:  DDTC114YLP-7

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  3-UFDFN

PACKAGING:  REEL

POWER - MAX:  250MW

RESISTOR - BASE (R1):  10 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

SUPPLIER DEVICE PACKAGE:  3-DFN1006 (1.0X0.6)

TRANSISTOR TYPE:  NPN - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  200MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V