CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  68 @ 5MA, 5V

EXPANDED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 50V 100MA 200MHZ 200MW SURFACE MOUNT SOT-23-3 (TO-236)

FREQUENCY - TRANSITION:  200MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  FAIRCHILD/ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FJV4104RMTF

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  200MW

RESISTOR - BASE (R1) (OHMS):  47K

RESISTOR - EMITTER BASE (R2) (OHMS):  47K

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TRANSISTOR TYPE:  PNP - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  300MV @ 500ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V