ADDITIONAL FEATURE:  LOW CONDUCTION LOSS, AVALANCHE RATED

CASE CONNECTION:  COLLECTOR

COLLECTOR CURRENT-MAX (IC):  21 A

COLLECTOR-EMITTER VOLTAGE-MAX:  1.2 KV

CONFIGURATION:  SINGLE

FALL TIME-MAX (TF):  200 NS

GATE-EMITTER VOLTAGE-MAX:  20 V

JEDEC-95 CODE:  TO-263AB

JESD-30 CODE:  R-PSSO-G2

JESD-609 CODE:  E0

MANUFACTURER:  FAIRCHILD SEMICONDUCTOR CORPORATION

MANUFACTURER PART NUMBER:  HGT1S5N120BNS

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G2

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  167 W

QUALIFICATION STATUS:  NOT QUALIFIED

RISE TIME-MAX (TR):  20 NS

SUBCATEGORY:  INSULATED GATE BIP TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  MOTOR CONTROL

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-NOM (TOFF):  357 NS

TURN-ON TIME-NOM (TON):  35 NS