CASE CONNECTION:  ISOLATED

COLLECTOR CURRENT-MAX (IC):  290 A

COLLECTOR-EMITTER VOLTAGE-MAX:  1.2 KV

CONFIGURATION:  SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE

GATE-EMITTER VOLTAGE-MAX:  20 V

JESD-30 CODE:  R-XUFM-X7

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSM200GB120DN2

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  7

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  HALF-BRIDGE 2, 7 PIN

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PART PACKAGE CODE:  MODULE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  7

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  1.4 KW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  INSULATED GATE BIP TRANSISTORS

SURFACE MOUNT:  NO

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  UNSPECIFIED

TERMINAL POSITION:  UPPER

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  POWER CONTROL

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-NOM (TOFF):  630 NS

TURN-ON TIME-NOM (TON):  190 NS

VCESAT-MAX:  3.2 V