CASE CONNECTION:  ISOLATED

COLLECTOR CURRENT-MAX (IC):  50 A

COLLECTOR-EMITTER VOLTAGE-MAX:  1.2 KV

CONFIGURATION:  BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

GATE-EMITTER VOLTAGE-MAX:  20 V

JESD-30 CODE:  R-XUFM-X17

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  BSM35GD120DN2

NUMBER OF ELEMENTS:  6

NUMBER OF TERMINALS:  17

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  UNSPECIFIED

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-XUFM-X17

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  17

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  280 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  INSULATED GATE BIP TRANSISTORS

SURFACE MOUNT:  NO

TERMINAL FORM:  UNSPECIFIED

TERMINAL POSITION:  UPPER

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR ELEMENT MATERIAL:  SILICON

TURN-OFF TIME-NOM (TOFF):  450 NS

TURN-ON TIME-NOM (TON):  120 NS

VCESAT-MAX:  3.2 V