CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  FULL BRIDGE

CURRENT - COLLECTOR (IC) (MAX):  72A

CURRENT - COLLECTOR CUTOFF (MAX):  1MA

DETAILED DESCRIPTION:  IGBT MODULE FULL BRIDGE 1200V 72A 350W CHASSIS MOUNT MODULE

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  3.3NF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BSM50GD120DN2BOSA1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  MODULE

POWER - MAX:  350W

STANDARD PACKAGE:  10

SUPPLIER DEVICE PACKAGE:  MODULE

VCE(ON) (MAX) @ VGE, IC:  3V @ 15V, 50A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V