CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  2 INDEPENDENT

CURRENT - COLLECTOR CUTOFF (MAX):  5MA

DETAILED DESCRIPTION:  IGBT MODULE 2 INDEPENDENT 1200V 5000W CHASSIS MOUNT MODULE

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  86NF @ 25V

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  FF1200R12KE3NOSA1

MANUFACTURER STANDARD LEAD TIME:  36 WEEKS

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  -40°C ~ 125°C

PACKAGE / CASE:  MODULE

POWER - MAX:  5000W

SIMULATION MODELS:  IPOSIM SPICE MODEL

STANDARD PACKAGE:  2

SUPPLIER DEVICE PACKAGE:  MODULE

VCE(ON) (MAX) @ VGE, IC:  2.15V @ 15V, 1200A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V