CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  HALF BRIDGE

CURRENT - COLLECTOR (IC) (MAX):  675A

CURRENT - COLLECTOR CUTOFF (MAX):  3MA

DETAILED DESCRIPTION:  IGBT MODULE TRENCH FIELD STOP HALF BRIDGE 1200V 675A 2250W CHASSIS MOUNT MODULE

IGBT TYPE:  TRENCH FIELD STOP

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  28NF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  FF450R12ME4BOSA1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  YES

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  MODULE

POWER - MAX:  2250W

STANDARD PACKAGE:  10

SUPPLIER DEVICE PACKAGE:  MODULE

VCE(ON) (MAX) @ VGE, IC:  2.1V @ 15V, 450A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V