CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  HALF BRIDGE

CURRENT - COLLECTOR (IC) (MAX):  600A

CURRENT - COLLECTOR CUTOFF (MAX):  5MA

DETAILED DESCRIPTION:  IGBT MODULE TRENCH FIELD STOP HALF BRIDGE 1200V 600A 3350W CHASSIS MOUNT MODULE

IGBT TYPE:  TRENCH FIELD STOP

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  37NF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  FF600R12IE4BOSA1

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  YES

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  MODULE

POWER - MAX:  3350W

STANDARD PACKAGE:  3

SUPPLIER DEVICE PACKAGE:  MODULE

VCE(ON) (MAX) @ VGE, IC:  2.05V @ 15V, 600A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V