CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  2 INDEPENDENT

CURRENT - COLLECTOR CUTOFF (MAX):  5MA

DETAILED DESCRIPTION:  IGBT MODULE 2 INDEPENDENT 1700V 4150W CHASSIS MOUNT MODULE

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  54NF @ 25V

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  FF650R17IE4DB2BOSA1

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  YES

OPERATING TEMPERATURE:  -40°C ~ 150°C

PACKAGE / CASE:  MODULE

POWER - MAX:  4150W

STANDARD PACKAGE:  3

SUPPLIER DEVICE PACKAGE:  MODULE

VCE(ON) (MAX) @ VGE, IC:  2.45V @ 15V, 650A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1700V