CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  SINGLE

CURRENT - COLLECTOR (IC) (MAX):  75A

CURRENT - COLLECTOR CUTOFF (MAX):  750ΜA

DETAILED DESCRIPTION:  IGBT MODULE PT SINGLE 1200V 75A 329W CHASSIS MOUNT ISOTOP®

IGBT TYPE:  PT

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  4NF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APT45GP120JDQ2

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  ISOTOP

POWER - MAX:  329W

SERIES:  POWER MOS 7®

STANDARD PACKAGE:  10

SUPPLIER DEVICE PACKAGE:  ISOTOP®

VCE(ON) (MAX) @ VGE, IC:  3.9V @ 15V, 45A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V