CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CONFIGURATION:  HALF BRIDGE

CURRENT - COLLECTOR (IC) (MAX):  610A

CURRENT - COLLECTOR CUTOFF (MAX):  5MA

DETAILED DESCRIPTION:  IGBT MODULE TRENCH FIELD STOP HALF BRIDGE 1200V 610A 2080W CHASSIS MOUNT D3

IGBT TYPE:  TRENCH FIELD STOP

INPUT:  STANDARD

INPUT CAPACITANCE (CIES) @ VCE:  24.6NF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APTGL475A120D3G

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

NTC THERMISTOR:  NO

OPERATING TEMPERATURE:  -40°C ~ 175°C (TJ)

PACKAGE / CASE:  D-3 MODULE

POWER - MAX:  2080W

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  D3

VCE(ON) (MAX) @ VGE, IC:  2.2V @ 15V, 400A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V