CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  500MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  70 @ 50MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 50V 500MA 140MHZ 320MW SURFACE MOUNT TO-236AB (SOT23)

FREQUENCY - TRANSITION:  140MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PDTB114ETR

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  320MW

RESISTOR - BASE (R1):  10 KOHMS

RESISTOR - EMITTER BASE (R2):  10 KOHMS

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TRANSISTOR TYPE:  PNP - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  100MV @ 2.5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

ALTERNATE PARTS:  PDTB114ETVL