CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  500MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  40 @ 50MA, 5V

EXPANDED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 500MA 250MW SURFACE MOUNT TO-236AB (SOT23)

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PDTD123ET,215

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  250MW

RESISTOR - BASE (R1) (OHMS):  2.2K

RESISTOR - EMITTER BASE (R2) (OHMS):  2.2K

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TRANSISTOR TYPE:  NPN - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  300MV @ 2.5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

ALTERNATE PARTS:  BCR503E6327HTSA1