CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - GATE TO ANODE LEAKAGE (IGAO):  10NA

CURRENT - PEAK:  2ΜA

CURRENT - VALLEY (IV):  50ΜA

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  2N6027RLRAG

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)

POWER DISSIPATION (MAX):  300MW

STANDARD PACKAGE:  1

VOLTAGE:  40V

VOLTAGE - OFFSET (VT):  1.6V

VOLTAGE - OUTPUT:  11V