BASE PART NUMBER:  FJN4303

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  56 @ 5MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 50V 100MA 200MHZ 300MW THROUGH HOLE TO-92-3

FREQUENCY - TRANSITION:  200MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FJN4303RTA

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)

PACKAGING:  TAPE BOX

POWER - MAX:  300MW

RESISTOR - BASE (R1):  22 KOHMS

RESISTOR - EMITTER BASE (R2):  22 KOHMS

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  TO-92-3

TRANSISTOR TYPE:  PNP - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  300MV @ 500ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V