CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 5MA, 10V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 50V 100MA 250MHZ 150MW SURFACE MOUNT EMT3F (SOT-416FL)

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOEMT3F-HF CONSTITUTION MATERIAL LISTDTA014TEB ESD DATA

FREQUENCY - TRANSITION:  250MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  DTA014TEBTL

MANUFACTURER STANDARD LEAD TIME:  40 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SC-89, SOT-490

PACKAGING:  REEL

POWER - MAX:  150MW

RESISTOR - BASE (R1):  10 KOHMS

SIMULATION MODELS:  DTA014TEB SPICE MODELDTA014TEB THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  EMT3F (SOT-416FL)

TRANSISTOR TYPE:  PNP - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  150MV @ 500ΜA, 5MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V