BASE PART NUMBER:  DTC114

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  50MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  30 @ 5MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 50MA 250MHZ 150MW SURFACE MOUNT VMT3

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOVMT3 CONSTITUTION MATERIAL LISTDTC114EM ESD DATA

FREQUENCY - TRANSITION:  250MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  DTC114EMT2L

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-723

PACKAGING:  REEL

POWER - MAX:  150MW

RESISTOR - BASE (R1):  10 KOHMS

RESISTOR - EMITTER BASE (R2):  10 KOHMS

SIMULATION MODELS:  DTC114EM SPICE MODELDTC114EM THERMAL MODEL

STANDARD PACKAGE:  8,000

SUPPLIER DEVICE PACKAGE:  VMT3

TRANSISTOR TYPE:  NPN - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  300MV @ 500ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V