CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  30 @ 10MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED + DIODE 100MA 250MHZ 200MW SURFACE MOUNT UMT3F

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFODTC114EUBHZG ESD DATA

FREQUENCY - TRANSITION:  250MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  DTC114EUBHZGTL

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SC-85

PACKAGING:  REEL

POWER - MAX:  200MW

RESISTOR - BASE (R1):  10 KOHMS

RESISTOR - EMITTER BASE (R2):  10 KOHMS

SERIES:  AUTOMOTIVE, AEC-Q101

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  UMT3F

TRANSISTOR TYPE:  NPN - PRE-BIASED + DIODE

VCE SATURATION (MAX) @ IB, IC:  300MV @ 500ΜA, 10MA