BASE PART NUMBER:  DTD123

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  500MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  56 @ 50MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 500MA 200MHZ 200MW SURFACE MOUNT SMT3

ENVIRONMENTAL INFORMATION:  TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFOSMT3 CONSTITUTION MATERIAL LISTDTD123YK ESD DATA

FREQUENCY - TRANSITION:  200MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ROHM SEMICONDUCTOR

MANUFACTURER PART NUMBER:  DTD123YKT146

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  200MW

RESISTOR - BASE (R1):  2.2 KOHMS

RESISTOR - EMITTER BASE (R2):  10 KOHMS

SIMULATION MODELS:  DTD123YK SPICE MODELDTD123YK THERMAL MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SMT3

TRANSISTOR TYPE:  NPN - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  300MV @ 2.5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V